
Product Description
The BC635 is a high performance NPN silicon planar epitaxial medium power Bipolar Transistor, low frequency devices typically with current ratings 1A up to 1W power dissipation.
Specifications
Type | NPN |
Collector Emitter Voltage Max: | 45V |
Collector Base Voltage Max: | 45V |
Emitter Base Voltage | 5V |
Continuous Collector Current: | 1A |
Power Dissipation: | 800mW |
DC Current Gain hFE Min | 100hFE |
Thermal Resistance, Junction To Case | 45°C/W |
Thermal Resistance, Junction To Ambient | 156°C/W |
Transition Frequency | 200MHz |
Operating Temperature | -55°C to 150°C |
Pins | 3 |
Mounting | Through Hole |
Casing | TO-92 |
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