
Product Description
Low power transistor with epitaxial silicon construction, suitable for switching applications.
Specifications
| Type | NPN |
| Collector Emitter Voltage Max: | B Open 30V |
| E-B Short 30V | |
| Collector Base Voltage Max: | E Open 30V |
| Collector Base Capacitance | 3.5pF to 6pF |
| Emitter Base Voltage | 5V |
| Continuous Collector Current: | 0.1A |
| Power Dissipation: | 500mW |
| DC Current Gain hFE Min | 800hFE |
| Thermal Resistance, Junction To Ambient | 200C/W |
| Transition Frequency | 300MHz |
| Operating Temperature | -55°C to 150°C |
| Pins | 3 |
| Mounting | Through Hole |
| Casing | TO-92 |
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