
Product Description
The 2N7000 is a N-channel enhancement mode Field Effect Transistor. Produced using Fairchild's proprietary, high cell density, DMOS technology. Very high density process, designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. Can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. Also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
Specifications
| Type | N Channel (MOSFET) |
| Drain-To-Source Voltage | 60V |
| Drain-To-Gate Voltage | 60V |
| Continuous Gate Source Voltage | ±20V |
| Non Repetitive Gate Source Voltage | ±40V |
| Maximum Drain Current Continuous | 200mA |
| Maximum Drain Current Pulsed | 500mA |
| Thermal Resistance, Junction To Ambient | 312.5C/W |
| Operating Temperature | -55°C to 150°C |
| Pins | 3 |
| Mounting | Through Hole |
| Casing | TO-92 |
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